Subscribe

Subscribe to our Newsletter and get informed about new publication regulary and special discounts for subscribers!

ILCPA > Volume 80 > Modification of Surface Properties of Silicon...
< Back to Volume

Modification of Surface Properties of Silicon Wafers by Laser-Assisted Electrochemical Etching

Full Text PDF

Abstract:

In this paper, the structural properties of porous silicon layer PSL were reported. Photo-assisted (laser) electrochemical etching PECE technique used to fabrication PSL from n-type wafer silicon as a function of etching time. Optical microscopy OM image is confirmed that the surface topography of porous silicon layer formation was a mud-like structure. The porosity and thickness have been determined gravimetrically are varied from 61% to 82% and 7.2 µm to 9.4µm respectively. The XRD patterns show that one diffraction peak for all PSL through anodization duration and it is assigned to the (400) plane and data confirmed the porous silicon PS was nanocrystalline.

Info:

Periodical:
International Letters of Chemistry, Physics and Astronomy (Volume 80)
Pages:
30-39
Citation:
H. A. Hadi, "Modification of Surface Properties of Silicon Wafers by Laser-Assisted Electrochemical Etching", International Letters of Chemistry, Physics and Astronomy, Vol. 80, pp. 30-39, 2018
Online since:
December 2018
Authors:
Export:
Distribution:
References:

[1] R.S. Dubey, D.K. Gautam, Structural and optical properties of light emitting nanocrystalline porous silicon layers, Optoelectronics and Advanced Materials – Rapid Communications. 3(9) (2009) 869-873.

[2] V. Lehmann, Electrochemistry of Silicon, Wiley VCH, Berlin, (2002).

[3] K. Hong, C. Lee, The structure and optical properties of n-type and p-type porous silicon, Journal of the Korean Physical Society. 42 (2003) S671-S675.

[4] O. Bisi, S. Ossicinib, L. Pavesic, Porous silicon: a quantum sponge structure for silicon based optoelectronics/Surface Science Reports 38, 2000, p.13.

DOI: https://doi.org/10.1016/s0167-5729(99)00012-6

[5] G. Lamedica et al., Investigation of morphology of porous silicon formed on N+ type silicon, Journal of Porous Materials. 7 (2000) 23–26.

[6] Hasan A. Hadi, Fabrication and electrical properties of FTO Nano-particles/Nanocrystal porous silicon heterojunction under gamma radiation effect, Materials Science. 12(3) (2015).

[7] Layla Alag Wali, SERS of silver plated-porous silicon chemical sensing application, Ph.D. thesis, Al-Mustansiriyah University, Baghdad, Iraq, (2017).

[8] R. Kumar, H. Mvi, A. Shukla, Macro and microsurface morphology reconstructions during laser-induced etching of silicon, Micron. 39 (2008) 287-293.

DOI: https://doi.org/10.1016/j.micron.2007.04.005

[9] B. Fodora et al., Porosity and thickness characterization of porous Si and oxidized porous Si layers – an ultraviolet-visible-mid infrared ellipsometry study, Microporous and Mesoporous Materials. (2016).

[10] V. Lehmann, Electrochemistry of Silicon, Wiley-VCH Verlag GmbH, (2002).

[11] G.K. Williamson, W.H. Hall, X-ray line broadening from filed aluminum and wolfram, Acta Metal. 1(1) (1953) 22-31.

DOI: https://doi.org/10.1016/0001-6160(53)90006-6

[12] M. Amaya, J. Nakamura, T Fuketa, Measurements of crystal lattice strain and crystallite size in irradiated UO2 pellet by X-ray diffractometry, Journal of Nuclear Science and Technolog. 45(3) (2008) 244–250.

DOI: https://doi.org/10.3327/jnst.45.244

[13] G. Águila Rodríguez et al., FTIR and photoluminescence studies of porous silicon layers oxidized in controlled water vapor conditions, Revista Mexicana De Fisica. 53(6) (2007) 431–435.

[14] K. Jarvis et al., Porous Silicon - A Nanostructured Delivery System,‏ in: Nanoscience and Nanotechnology, ICONN'06. International Conference on 2006, IEEE, pp.536-539.

[15] N. Gabouze et al., Study and applications of plasma-modified Si and porous Si surfaces, Applied Surface Science. 254 (2008) 3648–3652.

DOI: https://doi.org/10.1016/j.apsusc.2007.10.074

[16] W.J. Salcedo, F.J.R. Fernandez, E. Galeazzo, Structural characterization of photoluminescent porous silicon with FTIR spectroscopy, Brazilian Journal of Physics. 27(4) (1997) 158-161.

[17] F. Ruiz et al., Mesostructure of photoluminescent porous silicon, J. Vacuum Sci. and Technol. A. 12(4) (1994) 2565-2571.

[18] R.R. Koropecki, R. Arce, Infrared study of the kinetics of oxidation in porous amorphous silicon, J. Appl, Phys. 60(5) (1986) 1802-1807.

DOI: https://doi.org/10.1063/1.337223

[19] P.N. Vinod, M. Lal, Surface and optical characterization of the porous silicon textured surface for application in photovoltaics, in: Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE, IEEE, 2005, pp.1135-1138.

DOI: https://doi.org/10.1109/pvsc.2005.1488336
Show More Hide
Cited By:
This article has no citations.