Fabrication and Characterization of Porous Silicon Layer Prepared by Photo-Electrochemical Etching in CH3OH:HF Solution

Hadi, Hasan A.; Ismail, Raid A.; Habubi, Nadir F.

doi:10.18052/www.scipress.com/ILCPA.8.29

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Fabrication and Characterization of Porous Silicon Layer Prepared by Photo-Electrochemical Etching in CH₃OH:HF Solution

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Abstract:

Porous silicon (PS) has been fabricated by Photo-electrochemical etching. Porous silicon was anodized on n-type Si in light using a current density of 20 mA/cm² for 10 min. The porous structure formation was confirmed using XRD and AFM studies. The root mean square (RMS) roughness of the Porous silicon layer is found to be around 47.5 nm and the ten point height was 317 nm. The average of pores diameter was 419.98nm, and the grain growth is columnar with a (211) preferred orientation. The grain size of the PS was estimated from the Scherer’s formula and found to be 73 nm. All the properties of the porous silicon layer, such as porosity and the thickness depend on the anodization parameters. The porosity (P) was approximately 77%. The thickness of the layer formed during an anodization in constant current was 3.54 nm in gravimetric method, while its value was 1.77 nm by using the theoretical relation.

Info:

Periodical:

International Letters of Chemistry, Physics and Astronomy (Volume 8)

Pages:

29-36

DOI:

https://doi.org/10.18052/www.scipress.com/ILCPA.8.29

Citation:

H. A. Hadi et al., "Fabrication and Characterization of Porous Silicon Layer Prepared by Photo-Electrochemical Etching in CH₃OH:HF Solution", International Letters of Chemistry, Physics and Astronomy, Vol. 8, pp. 29-36, 2013

Online since:

February 2013

Authors:

Hasan A. Hadi, Raid A. Ismail, Nadir F. Habubi

Keywords:

AFM, Photo-Electrochemical Etching (PECE), Porosity, Porous Silicon, Thickness, XRD

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Open Access

This work is licensed under a
Creative Commons Attribution 4.0 International License

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[1] H. Hadi, "Impact of Etching Time on Ideality Factor and Dynamic Resistance of Porous Silicon Prepared by Electrochemical Etching (ECE)", International Letters of Chemistry, Physics and Astronomy, Vol. 72, p. 28, 2017

DOI: https://doi.org/10.18052/www.scipress.com/ILCPA.72.28

[2] A. Alwan, I. Naseef, A. Dheyab, "Well Controlling of Plasmonic Features of Gold Nanoparticles on Macro Porous Silicon Substrate by HF Acid Concentration", Plasmonics, 2018

DOI: https://doi.org/10.1007/s11468-018-0720-8

[3] S. Sohimee, Z. Hassan, N. Mahmoud Ahmed, L. Foong, Q. Hock Jin, "Effect of Different UV Light Intensity on Porous Silicon Fabricated by Using Alternating Current Photo-Assisted Electrochemical Etching (ACPEC) Technique", Journal of Physics: Conference Series, Vol. 1083, p. 012034, 2018

DOI: https://doi.org/10.1088/1742-6596/1083/1/012034

[4] S. Praveenkumar, D. Lingaraja, P. Mahiz Mathi, G. Dinesh Ram, "An experimental study of optoelectronic properties of porous silicon for solar cell application", Optik, 2018

DOI: https://doi.org/10.1016/j.ijleo.2018.09.176

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