Subscribe

Subscribe to our Newsletter and get informed about new publication regulary and special discounts for subscribers!

ILCPA > Volume 72 > Impact of Etching Time on Ideality Factor and...
< Back to Volume

Impact of Etching Time on Ideality Factor and Dynamic Resistance of Porous Silicon Prepared by Electrochemical Etching (ECE)

Full Text PDF

Abstract:

In this work, porous silicon layers were fabricated on p-type crystalline silicon wafers using electrochemical etching ECE process. Al films were deposited onto porous layer /Si wafers by thermal evaporation to form rectifying junction. An investigation of the dependence on applied etching time to formed PS layer was studied. Effect etching time on the electrical properties of porous silicon is checked using Current–voltage I–V characteristics. The ideality factor and dynamic resistances are found to be large than the one and 20 (kΩ) respectively by the analysis of the dark I–V characteristics of Al/PS/p-Si heterojunction.

Info:

Periodical:
International Letters of Chemistry, Physics and Astronomy (Volume 72)
Pages:
28-36
Citation:
H. A. Hadi "Impact of Etching Time on Ideality Factor and Dynamic Resistance of Porous Silicon Prepared by Electrochemical Etching (ECE)", International Letters of Chemistry, Physics and Astronomy, Vol. 72, pp. 28-36, 2017
Online since:
January 2017
Authors:
Export:
Distribution:
References:

[1] H.A. Hadi, R.A. Ismail, N.F. Habubi, Optoelectronic properties of porous silicon heterojunction photodetector, Indian J. Phys. 88 (2014) 59-63.

DOI: https://doi.org/10.1007/s12648-013-0375-4

[2] H.A. Hadi, R.A. Ismail, N.F. Habubi, Fabrication and characterization of porous silicon layer prepared by photo-electrochemical etching in CH3OH: HF solution, International Letters of Chemistry, Physics and Astronomy. 3 (2013) 29-36.

DOI: https://doi.org/10.18052/www.scipress.com/ilcpa.8.29

[3] H.A. Hadi, An effect etching time on structure properties of nano-crystalline p-type silicon, International Letters of Chemistry, Physics and Astronomy. 36 (2014) 327-333.

DOI: https://doi.org/10.18052/www.scipress.com/ilcpa.36.327

[4] H.A. Hadi, Fabrication and electrical properties of FTO Nano-particles/Nanocrystal porous silicon heterojunction under gamma radiation effect, Materials Science: An Indian Journal. 12(3) (2015) 100-106.

[5] H.A. Hadi, Fabrication and characterization of Sn/PS/p-Si photodetector, Journal of the college of education. 3 (2013) 634-647.

[6] L.T. Canham, Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers, Appl. Phys. Lett. 57 (1990) 1046-1048.

DOI: https://doi.org/10.1063/1.103561

[7] J. Pulsford et al., Behavior of a rectifying junction at the interface between porous silicon and its substrate, J. Appl. Phys. 75 (1994) 636-338.

[8] C. Li. Tsai, J.C. Campbell, A. Tasch, Photodetectors fabricated from rapid thermal oxidized porous Si, Appl. Phys. Lett. 62 (1993) 2818-2820.

DOI: https://doi.org/10.1063/1.109220

[9] M.L. Ciurea, V. Iancu, I. Stavarache, Quantum confinement modeling of electrical and optical processes in nanocrystalline silicon, Journal of Optoelectronics and Advanced Materials. 8 (2006) 2156-2160.

[10] H.A. Hadi, Comparative study of Schottky barrier heights of the different metals based on porous silicon prepared by photo-electrochemical etching (PECE), Materials Focus. 3(6) (2014) 438-443.

DOI: https://doi.org/10.1166/mat.2014.1201

[11] R. Sharma, Temperature dependence of I-V characteristics of Au/n-Si Schottky barrier diode, Journal of Electron Devices. 8 (2010) 286-292.

[12] A. Halimaoui, Porous silicon formation by anodization, in: Properties of porous silicon, ed. by L.T. Canham, Institution of Engineering and Technology, London, (1997).

[13] K. Hong, C. Lee, The structure and optical properties of n-type and p-type prous silicon, Journal of the Korean Physical Society. 42 (2003) S671_S675.

[14] Saymon, Porous silicon formation by anodization, in: Properties of porous silicon, ed. by L.T. Canham, Institution of Engineering and Technology, London, 1997, p.176.

[15] A.A.M. Farag, Structure and transport mechanisms of Si/porous Si n–p junctions prepared byliquid phase epitaxy, Applied Surface Science. 255 (2009) 3493–3498.

DOI: https://doi.org/10.1016/j.apsusc.2008.09.083

[16] R. Palma, J. Rigueiro, J. Duart, Study of carrier transport in metal/porous silicon/Si structures, J. Appl. Phys. 86 (1999) 6911-6914.

[17] A. Diligenti et al., Current transport in free standing porous silicon, Applied Physics Letters. 68(5) (1996) 687-689.

[18] C. Peng, K. Hirschman, P. Fauchet, Carrier transport in porous silicon light emitting devices, J. Appl. Phys. 80 (1996) 295-300.

DOI: https://doi.org/10.1063/1.362783

[19] H. Qing-Shan, Structural, optical and electrical properties of ZnS/porous silicon heterostructure, Chin. Phys. Lett. 24 (2007) 825.

[20] M. Pattabi et al., Effect of temperature and electron irradiation on the I-V characteristics of Au/CdTe Schottky diodes, Solar Energy. 81 (2007) 111-116.

DOI: https://doi.org/10.1016/j.solener.2006.06.004
Show More Hide