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Study of the Properties of the Porous Silicon Synthesized by Ag Assisted Chemical Etching

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Porous Silicon (PSi) is synthesized by Ag assisted electroless etching and characterized by Scanning electron microscopy (SEM). The effect of etching time on the optical reflectivity, optical absorbance of PSi is investigated. Reflectivity measurements showed that 45% reflectivity Si wafers drops from 45% to 10% for 2 hours etching and 6% for 3 hours etching. The decrease in the reflectivity shows that the PSi can be employed as an anti reflecting substrate in optoelectronic devices. The absorbance measurements reveal that the average absorbance of PSi is 0.60 in the wavelength range 300-800 nm after 2 hours etching. From the photoluminescence spectra it was found that PL intensity of PSi is high compared to bare silicon wafer. Static water contact angle measurements were performed to examine the hydrophobic properties of the PSi prepared under different conditions.


International Letters of Chemistry, Physics and Astronomy (Volume 71)
M. Karanam et al., "Study of the Properties of the Porous Silicon Synthesized by Ag Assisted Chemical Etching", International Letters of Chemistry, Physics and Astronomy, Vol. 71, pp. 40-48, 2016
Online since:
Nov 2016

[1] L.T. Canham, Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers, Appl. Phys. Lett. 57 (1990) 1046-1048.

[2] A. G. Cullis, L.T. Canham, P. D. J. Calcott, The structural and luminescence properties of porous silicon, J. Appl. Phys. 82 (1997) 909 – 965.

[3] L. Brus, Luminescence of Silicon Materials: Chains, Sheets, Nanocrystals, Nanowires, Microcrystals, and Porous Silicon, J. Phys. Chem. 98 (1994) 3575 – 3581.

[4] M. J. Sailor, E. J. Lee, Surface chemistry of luminescent silicon nanocrystallites, Adv. Mater. 9 (1997) 783 – 793.

[5] L.T. Canham, Bioactive silicon structure fabrication through nanoetching techniques, Adv. Mater. 7 (1995) 1033-1037.

[6] V.S.Y. Lin et al., A porous silicon-based optical interferometric biosensor, Science. 278 (1997) 840-843.

[7] S.E. Letant, M. J. Sailor, Detection of HF gas with a porous silicon interferometer, Adv. Mater. 12 (2000) 355-359.

[8] Y. Xiao et al., Controlled exfoliation of a heavily n-doped porous silicon double layer electrochemically etched for layer-transfer photovoltaics, Electrochim Acta. 74 (2012) 93-97.

[9] K.W. Kolasinski, J.W. Gogola, Rational design of etchants for electroless porous silicon formation, ECS Transactions. 33 (2011) 23-28.

[10] X. Li, P.W. Bohn, Metal-assisted chemical etching in HF/H2O2 produces porous silicon, Appl . Phys . Lett. 77 (2000) 2572-2574.

[11] S. Yae et al., Formation of porous silicon by metal particle enhanced chemical etching in HF solution and its application for efficient solar cells, Electrochem. Commun. 5 (2003) 632-636.

[12] S. Bastide et al., Chemical etching of Si by Ag nanocatalysts in HF-H2O2: application to multicrystalline Si solar cell texturisation, Phys Status Solidi C. 6 (2009) 1536-1540.

[13] Zhipeng Huang et al., Oxidation rate effect on the direction of metal-assisted chemical and electrochemical etching of silicon, J. Phys. Chem. C. 114 (2010) 10683-10690.

[14] Baris Ozdemir et al., Effect of electroless etching parameters on the growth and reflection properties of silicon nanowires, Nanotechnology. 22 (2011) 155606.

[15] A. Najar et al., Effect of hydrofluoric acid concentration on the evolution of photoluminescence characteristics in porous silicon nanowires prepared by Ag-assisted electroless etching method, J. Appl. Phys. 112 (2012) 033502.

[16] S. Gielis et al., Silver-Assisted Etching of Silicon Nanowires, ECS Transactions. 33 (2011) 49-58.

[17] K. Tsujino, M. Matsumura, Morphology of nanoholes formed in silicon by wet etching in solutions containing HF and H2O2 at different concentrations using silver nanoparticles as catalysts, Electrochim. Acta. 53 (2007) 28-34.

[18] C. Chartier, S. Bastide, C. Levy-Clement, Metal assisted chemical etching of silicon in HF-H2O2, Electrochim. Acta. 53 (2008) 5509-5516.

[19] A. Ramizy, Z. Hassan, K. Omar, Porous silicon nanowires fabricated by electrochemical and laser-induced etching, J. Mater. Sci. Mater. Electron. 22 (2011) 717-723.

[20] Jin-Young Jung et al., A strong antireflective solar cell prepared by tapering silicon nanowires, Opt. express. 18 (2010) A286-A292.

[21] M. Lipinskia et al., APorous Silicon Formation by Metal-Assisted Chemical Etching, Acta Phys. Pol. 116 (2009) S117-S119.

[22] G. Ledoux et al., Photoluminescence properties of silicon nanocrystals as a function of their size Phys. Rev. B 62 (2000) 15942 – 15951.

[23] A.B.D. Cassie, S. Baxter, Wettability of porous surfaces, Trans Faraday Soc. 40 (1944) 546-551.

[24] Dianpeng Qi et al., Simple Approach to Wafer-Scale Self-Cleaning Antireflective Silicon Surfaces, Langmuir. 25 (2009) 7769-7777.

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