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International Letters of Chemistry, Physics and Astronomy
Volume 63
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Effect of SnS Thin Film on the Performance of Porous Silicon Photodiode

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Abstract:

In this study, Al/SnS/PS/n-Si/Al photodiode was fabricated and investigated. SnS thin film were prepared by thermal evaporation technique on porous silicon layer which prepared by anodization technique at 32mA/cm2 etching current density and etching time 15min.The characteristics of porous silicon and SnS were investigated by using x-ray diffraction XRD, atomic force microscopy AFM, Fourier transformation infrared spectroscopy FT-IR.Dark and illuminated current-voltage I-V characteristics, spectral responsivity, specific detectivity of photodiode were investigated after depositing. Significant improvement in photosensitivity and detectivity of porous silicon photodiode after SnS deposition on porous silicon was noticed.

Info:

Periodical:
International Letters of Chemistry, Physics and Astronomy (Volume 63)
Pages:
67-76
DOI:
10.18052/www.scipress.com/ILCPA.63.67
Citation:
A. N. Abd et al., "Effect of SnS Thin Film on the Performance of Porous Silicon Photodiode", International Letters of Chemistry, Physics and Astronomy, Vol. 63, pp. 67-76, 2016
Online since:
Jan 2016
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