In this study, Al/SnS/PS/n-Si/Al photodiode was fabricated and investigated. SnS thin film were prepared by thermal evaporation technique on porous silicon layer which prepared by anodization technique at 32mA/cm2 etching current density and etching time 15min.The characteristics of porous silicon and SnS were investigated by using x-ray diffraction XRD, atomic force microscopy AFM, Fourier transformation infrared spectroscopy FT-IR.Dark and illuminated current-voltage I-V characteristics, spectral responsivity, specific detectivity of photodiode were investigated after depositing. Significant improvement in photosensitivity and detectivity of porous silicon photodiode after SnS deposition on porous silicon was noticed.
International Letters of Chemistry, Physics and Astronomy (Volume 63)
A. N. Abd et al., "Effect of SnS Thin Film on the Performance of Porous Silicon Photodiode", International Letters of Chemistry, Physics and Astronomy, Vol. 63, pp. 67-76, 2016