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A Quantum Confinement Study of the Electronic Energy of some Nanocrystalline Silicon Quantum-Dots
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A Quantum Confinement Study of the Electronic Energy of some Nanocrystalline Silicon Quantum-Dots

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Abstract:

We have employed a quantum confinement (QC) model to the study of different shapes of nanocrystalline silicon (nc-Si) quantum dot. Each dots (shapes), although within the limits of an effective diameter of 3nm, exhibits divergence leading to different electronic energy based on the transitions from the quantum selection rule. Also, the graphical representation of the energies from each shape as a function of the effective diameter gives a qualitatively similar spectrum of discrete energies. The results obtained in this work using QC model are in good agreement with experiment and other models in literature.

Info:

Periodical:
International Letters of Chemistry, Physics and Astronomy (Volume 63)
Pages:
106-110
DOI:
https://doi.org/10.18052/www.scipress.com/ILCPA.63.106
Citation:
S. A. Ekong and M. O. Osiele, "A Quantum Confinement Study of the Electronic Energy of some Nanocrystalline Silicon Quantum-Dots", International Letters of Chemistry, Physics and Astronomy, Vol. 63, pp. 106-110, 2016
Online since:
January 2016
Authors:
Sylvester A. Ekong, Mike O. Osiele
Keywords:
IQW, nc-Si, Quantum Confinement, Quantum-Dot, Shape
Export:
RIS, BibTeX, Text
Distribution:
Open Access

Creative Commons License
This work is licensed under a
Creative Commons Attribution 4.0 International License

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