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International Letters of Chemistry, Physics and Astronomy
ILCPA Volume 59
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Effects of Laser Pulse Energy and Annealing Process on Physical Properties of Nanostructured SiO<sub>2</sub> Prepared by Pulse Laser Deposition
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Effects of Laser Pulse Energy and Annealing Process on Physical Properties of Nanostructured SiO2 Prepared by Pulse Laser Deposition

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Abstract:

Silicon dioxide thin film of different thicknesses has been grown on glass substrate by pulsed laser deposition technique with and without annealing temperature under the vacuum pressure of 8×10-2 mbar. The optical properties such as the absorption, and transmission spectra have been studied for the prepared SiO2 thin film before and after annealing temperature. From the transmission spectra, the optical gap and linear refractive index of the SiO2 thin film was determined. The structure of the SiO2 thin film was tested with X-Ray diffraction, it was formed to be amorphous structure before annealing temperature. The effects of laser pulse energy on the optical properties has been studied before and after annealing temperature. It is found that almost optical properties depends on the laser pulse energy and increases with increasing laser pulse energy and they are enhanced with the annealing temperature. Keywords: SiO2 thin film, pulse laser deposition, annealing temperature.

Info:

Periodical:
International Letters of Chemistry, Physics and Astronomy (Volume 59)
Pages:
35-45
DOI:
https://doi.org/10.18052/www.scipress.com/ILCPA.59.35
Citation:
J. F. Odah, "Effects of Laser Pulse Energy and Annealing Process on Physical Properties of Nanostructured SiO2 Prepared by Pulse Laser Deposition", International Letters of Chemistry, Physics and Astronomy, Vol. 59, pp. 35-45, 2015
Online since:
September 2015
Authors:
Jafer Fahdel Odah
Keywords:
Annealing Temperature, Pulse Laser Deposition, SiO2 Thin Film
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Distribution:
Open Access

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This work is licensed under a
Creative Commons Attribution 4.0 International License

References:

[1] Douglas B. Chrisey and Graham K. Hubler, Pulsed Laser Deposition of Thin Flms, Wiley Interscience, New York, 199 (1994).

[2] Dijkamp, D., R. Venkatesan, X.D. Wu, S.A. Shaheen, N. Jisrawi, Y.H. Min-Lee, W.L. Mc-, and M. Croft, Preparation of Y-Ba-Cu oxide superconductor thin films using pulsed laser evaporation from high Tc bulk material, Appl. Phys. Lett. 51 (8), 619-621 (1987).

DOI: https://doi.org/10.1063/1.98366

[3] Chrisey, D.B., J.S. Horwitz, J.M. Pond, R.C.Y. Auyeung, P.C. Dorsey, S.B. Qadri, L.A. Knauss, C.H. Mueller, and R.M. Yandrofski, Active microwave device applications of ferroelectric thin films, SPIE Vol. 2403, 164-174 (1995).

DOI: https://doi.org/10.1117/12.206253

[4] Chrisey, D.B., P.C. Dorsey, J.S. Horwitz, L.A. Knauss, and R.C.Y. Auyeung, Pulsed laser deposition of thick films of electronic cerarnics, SPIE Vol. 2703, 386-397 (1996).

[5] Jin, S., T.H. Tiefel, M. McCormack, R.A. Fastnacht, R. Ramesh, and L.H. Chen, Thousandfold change in resistivity in magnetoresistive La-Ca-Mn-O films, Science Vol. 264, 413-415 (1994).

DOI: https://doi.org/10.1126/science.264.5157.413

[6] Horwitz, J.S., P.C. Dorsey, N.C. Koon, M. Rubinstein, J.M. Byers, D.J. Gillespie, M.S. Osofsky, V.G. Harris, K.S. Grabowski, D.L. hies, E.P. Donovan, R.E. Treece, and D.B. Chrisey, The effect of oxygen deposition pressure and temperature on the structure and properties of pulsed laser deposited La0. 67Ca0. 33MnOδ films, SOPI, E Vol. 2703, 526-533 (1996).

DOI: https://doi.org/10.1557/proc-401-525

[7] Antoni, F., C. Fuchs, and E. Fogarassy, Analytical description of the film thickness distribution obtained by the pulsed laser ablation of a monatomic target: application to Silicon and germanium, Appl. Surf. Sci. 96-98, 50-54 (1996).

DOI: https://doi.org/10.1016/b978-0-444-82412-7.50013-4

[8] Cillessen, J.F.M., R.M. Wolf, J.B. Giesbers, P.W.M. Blom, K. -O. Grosse-Holz, and E. Pastoor, Growth, structuring and characterisation of all-oxide thin film devices prepared by pulsed laser deposition, Appl. Surf. Sci. 96~98, 744-751 (1996).

DOI: https://doi.org/10.1016/b978-0-444-82412-7.50136-x

[9] Chergui, A., J.L. Deiss, J.B. Grun, J.L. Loison, M. Robino, and R. Beseman, Structural and optical characteristics of pulsed laser deposited ZnSe epilayers, Appl. Surf. Sci. 96998, 874-880 (1996).

DOI: https://doi.org/10.1016/b978-0-444-82412-7.50160-7

[10] Xiao, R.F., H.B. Liao, N. Cue, X.W. Sun, and H.S. Kwok, Growth of c-axis oriented gallium nitride thin films on an amorphous substrate by the liquid-target pulsed laser deposition technique, J. Appl. Phys. 80 (7), 4226-4228 (1996).

DOI: https://doi.org/10.1063/1.363302

[11] Narayan, J., H. Wu, and R.D. Vispute, Laser processing of BN and AIN films, J. of EIec. Mat. 25 (l), 143-149 (1996).

[12] Feiler, D., R.S. Williams, A.A. Talin, H. Yoon, and M.S. Goorsky, Pulsed laser deposition of epitaxial AlN, GaN, and InN thin films on sapphire(0001), J. of Crystal Growth 171, 12-20 (1997).

DOI: https://doi.org/10.1016/s0022-0248(96)00284-9

[13] Craciun, V., S. Amirhaghi, D. Craciun, J. Eldars, J.G.E. Gardeniers, and I.W. Boyd, Effects of laser wavelength and fluence on the growth of Zn0 thin films by pulsed laser deposition, Appl. Surf. Sci. 86, 99-106 (1995).

DOI: https://doi.org/10.1016/0169-4332(94)00405-6

[14] Durand, H. -A., J. -H. B rimaud, O. Hellman, H. Shibata, S. Sakuragi, Y. Makita, D. Gesbert, and P. Meyrueis, Excimer laser sputtering deposition of TiO2 optical coating for solar cells, Appl. Surf. Sci. 86, 122- 127 (1995).

DOI: https://doi.org/10.1016/0169-4332(94)00407-2

[15] Afonso, C.N., J.M. Ballesteros, J. Gonzalo, G.C. Righini, and S. Pelli, Rare-earth doped glass waveguides prepared by pulsed laser deposition, Appl. Surf. Sci. 96-98, 760-763 (1996).

DOI: https://doi.org/10.1016/b978-0-444-82412-7.50138-3

[16] Reisse, G., S. Weissmantel, B. Keisser, and B. Steiger, Deposition of optical coatings by pulsed laser ablation, SPIE Vol. 2403, 212-222 (1995).

DOI: https://doi.org/10.1117/12.206252

[17] Friedmann, T.A., D.R. Tallant, J.C. Barbour, J.P. Sullivan, M.P. Siegal, R.L. Simpson, J. Mikkalson, and K.F. McCarty, Characterization of carbon nitride films produced by pulsed laser deposition, Mat. Res. Soc. Symp. Proc. Vol. 388, 393-398 (1995).

DOI: https://doi.org/10.1557/proc-388-393

[18] Zhang, Z.J., S. Fan, J. Huang, and C.M. Lieber, Pulsed laser deposition and physical properties of carbon nitride thin films, J. of Elec. Mat. 25 (l), 57-61 (1996).

DOI: https://doi.org/10.1007/bf02666174

[19] Puretzky, A.A., D.B. Geohegan, GE. Jellison Jr., and M.M. McGibbon, Amorphous diamond-like carbon film growth by KrF- and ArF- excimer laser PLD: correlation with plume properties, Mat. Res. Soc. Symp. Proc. Vol. 388, 145-150 (1995).

DOI: https://doi.org/10.1557/proc-388-145

[20] Lowndes, D.H., D.B. Geohegan, A.A. Puretzky, D.P. Norton, C.M. Rouleau, Synthesis of Novel Thin-Film Materials by Pulsed Laser Deposition, Science Vol. 273, 898-903 (1996).

DOI: https://doi.org/10.1126/science.273.5277.898

[21] B. D. Jackson, Pulsed-Laser Deposition of Silicon Dioxiode Thin-Films Using the Molecular Flourine Laser, M. Sc. thesis, University of Toronto, Canada, (1997).

[22] Fair, R.B., Conventional and rapid thermal processes, in US1 Technology, edited by C.Y. Chang and S.M. Sze, McGraw-Hill Companies, Iric., New York, 144-204 (1996).

[23] Fogarassy, E., A. Slaoui, C. Fuchs, and J.P. Stoquert, Synthesis of Si02 thin films by reactive excimer laser ablation, Appl. Surf. Sci. 54, 180- 186 (1992).

DOI: https://doi.org/10.1016/0169-4332(92)90041-u

[24] Slaoui, A., E. Fogarassy, C. Fuchs, and P. Siffert, Characterization of SiO2 films deposited by reactive excimer laser ablation of Si0 target", paper presented at INFOS , 91, Liverpool, April 199 1, Contributed Papers, Section 3, 195- 198 (1991).

[25] Slaoui, A., E. Fogarassy, C. Fuchs, and P. Siffert, Properties of silicon dioxide films prepared by pulsed-laser ablation, J. Appl. Phys. 71 (2), 590-596 (1992).

DOI: https://doi.org/10.1063/1.350411

[26] Wolf, P.J., The plasma properties of laser-ablated SiOs, J. Appl. Phys. 72 (4), 1280-1289 (1992).

[27] Baeri, P., R. Reitano, and N. Marino, SiO2 film deposition by XeCl laser ablation of fused silica, App. Surf. Sci. 86, 128-133, (1995).

DOI: https://doi.org/10.1016/0169-4332(94)00379-3
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