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Volume 55
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Theoretical Modeling of a Photodetector Based on Ballistic Carbone Nanotube with VHDL-AMS
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Theoretical Modeling of a Photodetector Based on Ballistic Carbone Nanotube with VHDL-AMS

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Abstract:

In this paper we present a new VHDL-AMS model of carbone nanotube field effect transistor for photo-detection application: (photo-CNTFET). Contrary to classical photodetectors, the photo-CNTFET has the potential to work on a wide range of optical frequencies and high quantum efficiency and can be used as a highly sensitive and rapid response photodetector. Based on its excellent conductivity and very low capacitance, Carbon nanotubes provide highly mobile electrons and low noise in the system. The simulation results obtained in the present paper has shown its relevance as precise and fast tool to investigate the effects of photoexcitation on Ids-Vds characteristics of the photo-CNTFET. We have present results obtained after variation of power illumination and light beam wavelength.

Info:

Periodical:
International Letters of Chemistry, Physics and Astronomy (Volume 55)
Pages:
112-118
DOI:
https://doi.org/10.18052/www.scipress.com/ILCPA.55.112
Citation:
M. Troudi et al., "Theoretical Modeling of a Photodetector Based on Ballistic Carbone Nanotube with VHDL-AMS", International Letters of Chemistry, Physics and Astronomy, Vol. 55, pp. 112-118, 2015
Online since:
July 2015
Authors:
M. Troudi, Abdelghani Mahmoudi, N. Sghaier, A. Soltani
Keywords:
Ballistic Carbone, Photodetector Based, Theoretical Modeling, VHDL-AMS
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Distribution:
Open Access

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This work is licensed under a
Creative Commons Attribution 4.0 International License

References:

[1] S. Iijima, Helical microtubules of graphitic carbon, (1991), Nature, No 56 , p.354.

[2] S. Iijima and T. Ichihashi, Single-shell carbon nanotubes of 1 nm diameter, (1993), Nature, No 603, p.363.

DOI: https://doi.org/10.1038/363603a0

[3] S. Reich, C. Thomsen, J. Maultzsch, Carbon Nanotubes: Basic Concepts and Physical Properties, Wiley-VCH, New York, (2003).

[4] R. Saito, G. Dresselhaus, M.S. Dresselhaus, Physical Properties of Carbon Nanotubes, Imperial College Press, (2003).

[5] F. Sharifi, A. Momeni, K. Navi, CNFET based basic gates and a novel full-adder cell, International Journal of VLSI design & Communication Systems (VLSICS), (2010) Vol. 3, No. 3, pp.11-19.

DOI: https://doi.org/10.5121/vlsic.2012.3302

[6] Ghorbani, M. Sarkhosh, E. Fayyazi, P. Keshavarzian, (2012) A novel full adder cell based on carbon nanotube field effect transistors, International Journal of VLSI design & Communication Systems (VLSICS), Vol. 3, No. 3, pp.33-42.

DOI: https://doi.org/10.5121/vlsic.2012.3304

[7] Avouris P, Appenzeller J, Martel R, Wind SJ. Carbon nanotube electronics,. Proceedings of IEEE. 2004; Vol 91, No11, p.1772–1784.

DOI: https://doi.org/10.1109/jproc.2003.818338

[8] A. Ambrosio, C. Aramo. Carbon Nanotubes-Based Radiation Detectors, Carbon Nanotubes Applications on Electron Devices, ISBN: 978-953-307-496-2, InTech(2011).

DOI: https://doi.org/10.5772/18086

[9] P. Castrucci et al., Large photocurrent generation in multiwall carbon nanotubes, Appl. Phys(2006). Lett. p.89, No 253107.

[10] P. Castrucci et al., Light harvesting with multiwall carbon nanotube/silicon heterojunctions, Nanotechnology (2011), p.22, No 115701.

[11] M. Tzolov et al., Carbon nanotube-silicon heterojunction arrays and infrared photocurrent responses, J. Phys. Chem. C (2007), p.111, No 5800.

[12] P.L. Ong, W.B. Euler and I.A. Levitsky, Carbon nanotube-Si diode as a detector of mid-infrared illumination, Appl. Phys. Lett. (2010), p.96 No, 033106.

DOI: https://doi.org/10.1063/1.3279141

[13] A. Ambrosio et al., Sensing pulsed light by means of multi-walled carbon nanotubes, Mat. Sci. Semicon. Proc. (2008), p.11, No 187.

[14] M. Passacantando et al., Photoconductivity in defective carbon nanotube sheets under ultraviolet-visible-near infrared radiation, Appl. Phys. Lett. (2008), p.93, No 051911.

DOI: https://doi.org/10.1063/1.2968203

[15] B.K. Sarker, M. Arif, P. Stokes and S.I. Khondaker, Diffusion mediated photoconduction in multiwalled carbon nanotube films, J. Appl. Phys. (2009), p.106, No 074307.

DOI: https://doi.org/10.1063/1.3243335

[16] S. Lin, Y.B. Kim, F. Lombardi, (2009) A novel CNTFET-based ternary logic gate design, 52nd IEEE International Midwest Symposium on Circuits and Systems, pp.435-438.

DOI: https://doi.org/10.1109/mwscas.2009.5236063

[17] M.E. Itkis et al., Bolometric infrared photoresponse of suspended single-walled carbon nanotube film, Science(2006), p.312, No 5772.

DOI: https://doi.org/10.1126/science.1125695

[18] S.X. Lu and B. Panchapakesan, Photoconductivity in single wall carbon nanotube sheets, Nanotechnology(2006), p.17, No 1843.

DOI: https://doi.org/10.1088/0957-4484/17/8/006

[19] I.A. Levitsky and W.B. Euler, Photoconductivity of single-wall carbon nanotubes under continuous-wave near-infrared illumination, Appl. Phys. Lett. (2003), p.83 No. 1857.

DOI: https://doi.org/10.1063/1.1606099

[20] T. J. Kazmierski, D. Zhou, B. M. Al-Hashimi, and P. Ashburn, Numerically Efficient Modeling of CNT Transistors With Ballistic and Nonballistic Effects for Circuit Simulation, IEEE Transactio tel-00592479.

DOI: https://doi.org/10.1109/tnano.2009.2017019

[21] M. Freitag, Y. Martin, J. A. Misewich, | R. Martel, and Ph. Avouris, Photoconductivity of Single Carbon Nanotubes, NANO LETTERS 2003 Vol. 3, No. 81067-1071.

DOI: https://doi.org/10.1021/nl034313e

[22] www. mentor. com.

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