Paper Titles in Periodical
International Letters of Chemistry, Physics and Astronomy
Volume 53

Subscribe

Subscribe to our Newsletter and get informed about new publication regulary and special discounts for subscribers!

ILCPA > Volume 53 > Impact of Changing Anodization Current Density on...
< Back to Volume

Impact of Changing Anodization Current Density on Structural and Morphological Properties of PSi Layer

Full Text PDF

Abstract:

In this paper, porous silicon layer prepared by electrochemical etching process of (100) p-type silicon wafer at different current densities (9, 11, 14 and 16)mA/cm² for 15min etching time. The structural and morphological properties were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM),energy dispersive X-ray (EDX), atomic force microscopy (AFM), fourier transformation infrared spectroscopy (FTIR) and photoluminescence (PL). XRD investigation exhibited that all the layers were monocrystalline structure with preferred orientation (211). AFM investigation indicates that PSi layer sponge like structure, and average diameter of pore increased with increasing current density, our result showed a PSi structure with porosity of (34.19-75.36%). From FTIR analysis, it has been show that the Si dangling bonds of the prepared PSi layer have large amount of Hydrogen to form (Si-H) bond. Increasing the current density from (9-16mA/cm²)leads to shift the photoluminescence peak position from (1.63-1.66eV).

Info:

Periodical:
International Letters of Chemistry, Physics and Astronomy (Volume 53)
Pages:
180-192
DOI:
https://doi.org/10.18052/www.scipress.com/ILCPA.53.180
Citation:
W.'a M. Abdulridha et al., "Impact of Changing Anodization Current Density on Structural and Morphological Properties of PSi Layer", International Letters of Chemistry, Physics and Astronomy, Vol. 53, pp. 180-192, 2015
Online since:
Jul 2015
Authors:
Wasna'a M. Abdulridha, Raheem G. Kadhim, Raid A. Ismail
Keywords:
Current Density, Morphological Properties, Porous Silicon, XRD
Export:
RIS, BibTeX, Text
Distribution:
Open Access

Creative Commons License
This work is licensed under a
Creative Commons Attribution 4.0 International License

References:

[1] R. S. Dubey, Electrochemical Fabrication of Porous Silicon Structures for Solar Cells, Nanosci. Nanoeng., vol. 1, no. 1, p.36–40, (2013).

[2] V. Lakshmipriya, N. Jeyakumaran, and N. Prithivikumaran, Structural properties of Porous Silicon layers - Influence of etching time, vol. 6, no. 13, p.5261–5264, (2014).

[3] F. Alfeel, F. Awad, I. Alghoraibi, and F. Qamar, Using AFM to Determine the Porosity in Porous Silicon, J. Mater. Sci. Eng. A, vol. 2, no. 9, p.579–583, (2012).

[4] W. Salcedo, F. R. Fernandez, and E. Galeazzo, Structural characterization of photoluminescent porous silicon with FTIR spectroscopy, Brazilian J. Phys., vol. 27, no. 4, p.158–161, (1997).

[5] S. Yaakob, M. A. Bakar, J. Ismail, N. H. H. A. Bakar, and K. Ibrahim, The formation and morphology of highly doped n-type porous silicon: Effect of short etching time at high current density and evidence of simultaneous chemical and electrochemical dissolutions, J. Phys. Sci., vol. 23, no. 2, p.17–31, (2012).

[6] A. H. Jaafar, Characteristics of Nanostructure Porous Silicon Prepared by Anodization Technique, vol. 31, no. 3, p.339–347, (2013).

[7] B. K. Mohamid, U. M. Nayef, and Z. F. Kadem, Chemical , Morphological and Electrical Properties of Porous Silicon Prepared by Photelectrochemical Etching, vol. 16, no. 4, p.145–151, (2013).

[8] M. a. Vásquez-A., G. Águila Rodríguez, G. García-Salgado, G. Romero-Paredes, and R. Peña-Sierra, FTIR and photoluminescence studies of porous silicon layers oxidized in controlled water vapor conditions, Rev. Mex. Fis., vol. 53, no. 6, p.431–435, (2007).

DOI: https://doi.org/10.1109/iceee.2006.251918

[9] H. H. Hussein, Study of the Characteristics of Porous Silicon by Electrochemical Etching, Eng. Tech. Journal, vol. 31, no. 1, p.34–38, (2013).

[10] K. Behzad, W. Yunus, and Z. Talib, Effect of Preparation Parameters on Physical, Thermal and Optical Properties of n-type Porous Silicon, Int. J. Electrochem. Sci., vol. 7, p.8266–8275, (2012).

[11] M. Ohmukai, N. Uehara, and Y. Tsutsumi, The Effect of Chemical Etching of Porous Silicon : Photoluminescence Spectral Changes, vol. 12, no. 52, p.12–15, (2009).

Show More Hide