In this paper, porous silicon layer prepared by electrochemical etching process of (100) p-type silicon wafer at different current densities (9, 11, 14 and 16)mA/cm² for 15min etching time. The structural and morphological properties were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM),energy dispersive X-ray (EDX), atomic force microscopy (AFM), fourier transformation infrared spectroscopy (FTIR) and photoluminescence (PL). XRD investigation exhibited that all the layers were monocrystalline structure with preferred orientation (211). AFM investigation indicates that PSi layer sponge like structure, and average diameter of pore increased with increasing current density, our result showed a PSi structure with porosity of (34.19-75.36%). From FTIR analysis, it has been show that the Si dangling bonds of the prepared PSi layer have large amount of Hydrogen to form (Si-H) bond. Increasing the current density from (9-16mA/cm²)leads to shift the photoluminescence peak position from (1.63-1.66eV).
International Letters of Chemistry, Physics and Astronomy (Volume 53)
W.'a M. Abdulridha et al., "Impact of Changing Anodization Current Density on Structural and Morphological Properties of PSi Layer", International Letters of Chemistry, Physics and Astronomy, Vol. 53, pp. 180-192, 2015