Paper Titles in Periodical
International Letters of Chemistry, Physics and Astronomy
Volume 51

Subscribe

Subscribe to our Newsletter and get informed about new publication regulary and special discounts for subscribers!

ILCPA > Volume 51 > Performance of a Nano PbS/Si Hetrojunction...
< Back to Volume

Performance of a Nano PbS/Si Hetrojunction Deposited by Chemical Spray Pyrolysis

Full Text PDF

Abstract:

Deposition of polycrystalline Lead sulfide nanothin films onto Si and glass substrates at temperatures (200-300 °C) was carried out by chemical spraying route using optimized preparative conditions. The XRD pattern confirmed the formation of PbS semiconducting films with orthorhombic structure. The electrical and optical properties of the nanocrystalline thin films were studied aiming to better understanding for the electrical and opto-electrical properties of a hetrojunction with p-type Si. It was found that, the average grain size of PbS in the films was between 4 nm and 7 nm. The band gap was also calculated from the absorption co-efficient curves and showed a blue shift due to the grain size of the nanoPbS in the films. The current-voltage (I-V) and photoresponse characteristics were obtained with different illumination intensities. The detector exhibits an evident wide-range spectral responsivity

Info:

Periodical:
International Letters of Chemistry, Physics and Astronomy (Volume 51)
Pages:
13-16
DOI:
https://doi.org/10.18052/www.scipress.com/ILCPA.51.13
Citation:
A. M. Mousa and K. H. Jawad, "Performance of a Nano PbS/Si Hetrojunction Deposited by Chemical Spray Pyrolysis", International Letters of Chemistry, Physics and Astronomy, Vol. 51, pp. 13-16, 2015
Online since:
May 2015
Authors:
Ali M. Mousa, Karem H. Jawad
Keywords:
Chemical Spray Pyrolysis Deposition, Hetrojunction, Nano Film
Export:
RIS, BibTeX, Text
Distribution:
Open Access

Creative Commons License
This work is licensed under a
Creative Commons Attribution 4.0 International License

References:

[1] K. Yu, J. Chen, Enhancing solar cell efficiencies through 1-D nanostructures, Nanoscale Res. Lett. 4 (2009) 1-10.

[2] V. Svrcek, A. Slaoui, J.C. Muller, Silicon nan ocrystals as light converter for solar cells, Thin Solid Films 451-452 (2004) 384-388.

DOI: https://doi.org/10.1016/j.tsf.2003.10.133

[3] Ali M. Mousa and Adawiya J. Haider, Performance of a Nano CdS/Si Hetrojunction Deposited by CBD; International Journal of Semiconductor Science & Technology (IJSST) Vol. 3, Issue 4, Oct 2013, 11-18.

[4] C.Q. Sun, B.K. Tay, S. Li, X.W. Sun, S.P. Lau, T.P. Chen, Bandgap expansion of a nanometric semiconductor, Mater. Phys. Mech. 4 (2001) 129-133.

[5] A. M. Mousa, M. A. Mohammed, and R. Kadhim , Structural and optical characterization of InAs nanocrystals deposited by spray pyrolysis ; AIP Conference Proceedings 1653, 020073 (2015).

DOI: https://doi.org/10.1063/1.4914264

[6] Ali M. Mousa, Selm M. H. AL-jawadi & Suad M. Kadhim AL-SHAMMARI, Performance of a nanostructured Pbs/Si Hetrojunction Deposited by CBD ; International Journal of Semiconductor Science & Technology (IJSST) Vol. 3, Issue 4, Oct 2013, 11-18.

[7] Lung-Chien Chen, Cheng-An Hsieh and Xiuyu Zhang, Electrical Properties of CZO Films Prepared by Ultrasonic Spray Pyrolysis; Materials 2014, 7, 7304-7313.

DOI: https://doi.org/10.3390/ma7117304
Show More Hide