Thin films of zinc ferrite (ZnFe2O4) were deposited on glass, quartz and p-silicon (100) substrates by the sol-gel method. The structural properties of the films were studied using x-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The XRD data show the film having a spinel structure and the crystalline phase exists after annealing at 500°C for 2 h in air. The SEM and AFM images show the nanocrystalline nature of the films. The optical transmittance decreased with increase of annealing temperature. The optical band gap energy was estimated at different annealing temperatures and found to be 2.71 eV after annealing at 400°C. The metal-insulator-semiconductor (MIS) capacitors were fabricated using ZnFe2O4 films on p-silicon (100) substrates. The capacitance-voltage (C-V), dissipation-voltage (D-V) and current-voltage (I-V) characteristics were studied. The dependence of dielectric constant on annealing temperature and signal frequency was analyzed. The variation of current density and resistivity of the ZnFe2O4 films with annealing temperature was also explored.
International Letters of Chemistry, Physics and Astronomy (Volume 50)
M. Vishwas et al., "Fabrication and Characterization of ZnFe2O4 Thin Film Based Metal-Insulator-Semiconductor Capacitors", International Letters of Chemistry, Physics and Astronomy, Vol. 50, pp. 151-158, 2015