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ILCPA > Volume 43 > Point Defects in GaAs Photonic Crystals
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Point Defects in GaAs Photonic Crystals

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Abstract:

Applying plane wave expansion method to one dimensional multilayer system formed from alternating layers of GaAs and air, a defect mode was artificially introduced by removing a GaAs layer at the centre of a supercell and the band structures and mode field distributions were obtained. The defect mode normalized frequency was 0.28. The parameters for developing a Febry-Perot filter in the visible frequencies are given. The point defects in a two dimensional square lattice formed from GaAs rods of radius 0.16a in air was created by removing one GaAs rod at the centre of a supercell and also by increasing the centre GaAs rod radius to 0.5a. The removal of the rod folded the band structure 25 times creating a localized evanescent defect mode. The increment of the centre GaAs rod radius led to five defect bands inside the band gap with one degenerate state creating a monopole, two quadrupoles and two hexapoles. Evolution of the defect modes with the variation of the radius of GaAs rod is also presented.

Info:

Periodical:
International Letters of Chemistry, Physics and Astronomy (Volume 43)
Pages:
91-102
Citation:
S.E. Dissanayake and K.A.I.L. Wijewardena Gamalath, "Point Defects in GaAs Photonic Crystals", International Letters of Chemistry, Physics and Astronomy, Vol. 43, pp. 91-102, 2015
Online since:
Jan 2015
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References:

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S. E. Dissanayake, K. A. I. L. Wijewardena Gamalath, ILCPA 5 (2014) 58-88. ( Received 30 November 2014; accepted 15 December 2014 ).

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