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Annealing Effects on the Interband Transition and Optical Constants of Cobalt Doped Cadmium Oxide Thin Films

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Abstract:

The CdO: Co films have been deposited on substrate temperature at 400 °C by spray pyrolysis method using cadmium chloride and cobalt chloride as a precursors for Cd and Co ions, respectively. The effect of annealing temperature on optical constants of Co: CdO thin films are investigated using UV-Visible spectrophotometer in the range of (300-900) nm at room temperature. The absorbance and optical parameters such as α, n, ε1, ε2, and χ are increased when the annealing temperature increases, while the energy gap decreased from 2.5 eV before annealing to 2.48 eV after 500 °C annealing temperature. Urbach energy is increased with the increasing of annealing temperature from 353 meV for sample before annealing to 715 meV for the same samples annealed at 500 °C.

Info:

Periodical:
International Letters of Chemistry, Physics and Astronomy (Volume 43)
Pages:
81-90
DOI:
https://doi.org/10.18052/www.scipress.com/ILCPA.43.81
Citation:
N. F. Habubi "Annealing Effects on the Interband Transition and Optical Constants of Cobalt Doped Cadmium Oxide Thin Films", International Letters of Chemistry, Physics and Astronomy, Vol. 43, pp. 81-90, 2015
Online since:
Jan 2015
Authors:
Nadir F. Habubi
Keywords:
Annealing Temperature, Co Doped CdO, Optical Properties
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Distribution:
Open Access

Creative Commons License
This work is licensed under a
Creative Commons Attribution 4.0 International License

References:

T.K. Lakshmanan, J. Electrochem. Soc. 110 (1963) 548.

R. Ferro, J.A. Rodríguez, Thin Solid Films 347 (1999) 295.

Zhiyong Zhao, D.L. Morel, C.S. Ferekides, Thin Solid Films 413 (2002)203.

K. Gurumurugan, D. Mangalaraj, Sa.K. Narayandass, J. Electron. Mater. 25 (1996) 765.

N. Ueda, H. Maeda, H. Ozono, H. Kawazoe, J. Appl. Phys. 84 (1998) 6174.

D. Ma, Z. Ye, L. Wang, J. Huang, B. Zhao, Mater. Lett. 58 (2004) 128.

H. Kim, J. Horwitz, W. Kim, A. Makinen, Z. Kafafi, D. Chrisey, Thin SolidFilms 420 (2002) 539.

Y. Yang, L. Wang, H. Yan, S. Jin, T.J. Marksa, S. Li, Appl. Phys. Lett. 89 (2006) 051116.

K. Gurumurugan, D. Mangalaraj, Sa.K. Narayandass, C. Balasubramanian, Phys. Stat. Sol. (a)143 (1994) 85.

K. Gurumurugan, D. Mangalaraj, Sa.K. Narayandass, K. Sekar C.P.G. Vallabhan, Semicond. Sci. Technol. 9 (1994) 1827.

T.L. Chu, S.S. Chu, J. Electron. Mater. 19 (1990) 1003.

M. Ocampo, P.J. Sebastian, J. Campos, Phys. Stat. Sol. (a)143 (1994) K29.

G. Phatak, R. Lal, Thin Solid Films 245 (1994) 17.

I.J. Ferrer, Electrochim. Acta 38 (1993) 2199.

K. Gurumurugan, D. Mangalaraj, Sa.K. Narayandass, J. Electron. Mater. 25 (1996) 765.

T.K. Subramanyam, S. Uthanna, B.S. Naidu, Physica Scripta 57 (1998) 317.

D.M. Carballeda-Galicia, R. Castanedo-Perez, O. Jimenez- ´´ Sandoval, S. JimenezSandoval, G. Torres-Delgado, C.I. Zuni-ga-Romero, Thin Solid Films 317 (2000) 105.

Xue S. W., Zu X. T., Zhou W. L., Deng H-X., Xiang X., Zhang L., and Deng H., Effects of PostThermal Annealing on The Optical Constants of ZnO Thin Film, Journal of Alloys and Compounds, 448 (2008) 21.

N. F. Mott, E. A. Davis, Electronic Process in Non-Crystalline Materials, Calendron Press, Oxford (1979).

Caglar, Y., Ilican, S., Caglar, M. and Yakuphanoglu, F. , Effects of In, Al and Sn Dopants on The Structural and Optical Properties of ZnO Thin Films, SpectrochimicaActa Part A, 67 (2007) 1113.

P.K. Ghosh, R. Maity, K.K. Chattopadhyay, Sol. Energy Mater. Sol. Cells 81 (2004) 279.

S. K. J. Al-Ani, Y. Al-Ramadin, M. S. Ahmad, A. M. Zihlif, M. Volpe, M. Malineonico, E. Martuscelli, G. Ragosta, Polymer Testing, 18 (1999) 611.

E. Abd El-Wahabb, A. E. Bekheet, Applied Surface Science, 173 (2001) 103.

Eloy, J. F. Power Lasers, National School of Physics, Grenoble, France, John Wiley and Sons, 59 (1984). ( Received 30 November 2014; accepted 16 December 2014 ).

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