Paper Titles in Periodical
International Letters of Chemistry, Physics and Astronomy
Volume 36

Subscribe

Subscribe to our Newsletter and get informed about new publication regulary and special discounts for subscribers!

ILCPA > Volume 36 > An Effect Etching Time on Structure Properties of...
An Effect Etching Time on Structure Properties of Nano-Crystalline p-Type Silicon
< Back to Volume

An Effect Etching Time on Structure Properties of Nano-Crystalline p-Type Silicon

Full Text PDF

Abstract:

This paper reports the influence of the etching time on structural characteristics of porous silicon manufactured by electrochemical etching (ECE) anodization p-type silicon wafers. Micro and nano-structural features of the samples are mainly investigated by XRD and AFM techniques. The morphological properties of PS layer such as nano-crystalline size, the structure aspect of PS layer and lattice constant have been investigated. Nanocrystals size (grain size) computing from XRD data (145 to 85) nm is resulting the increasing etching time.AFM investigations reveal increase in (RMS) roughness, Sz.(Ten Point height) and average diameter of the porous structure with increase in etching time.

Info:

Periodical:
International Letters of Chemistry, Physics and Astronomy (Volume 36)
Pages:
327-333
DOI:
https://doi.org/10.18052/www.scipress.com/ILCPA.36.327
Citation:
H. A. Hadi "An Effect Etching Time on Structure Properties of Nano-Crystalline p-Type Silicon", International Letters of Chemistry, Physics and Astronomy, Vol. 36, pp. 327-333, 2014
Online since:
July 2014
Authors:
Hasan A. Hadi
Keywords:
AFM, Electrochemical Etching (ECE), Porous Silicon, XRD
Export:
RIS, BibTeX, Text
Distribution:
Open Access

Creative Commons License
This work is licensed under a
Creative Commons Attribution 4.0 International License

References:

Hasan A. Hadi, International Letters of Chemistry, Physics and Astronomy 17(2) (2014) 142-152.

Hasan A. Hadi, Raid A. Ismail, Nadir F. Habubi, International Letters of Chemistry, Physics and Astronomy 3 (2013) 29-36.

Hasan A. Hadi, Intesar H. Hashim, Journal of Electron Devices 20 (2014) 1701-1710.

M. Jayachandran, M. Paramasivam, K.R. Murali, D.C. Trivedi M. Raghavan, Meter. Phys. Mech. 4 (2001) 143-147.

J. P. Kar, S. K. Mothanta, G. Bose, S. Tuli, A. Kamra, V. Mathur, Journal of optoelectronic and advanced material 11 (2009) 238-242.

M. Jayachandran, M. Paramasivam, K. Murali, D. Trivedi, M. Raghavan, Meter. Phys. Mech. 4 (2001) 143-147.

K. Omar, A. Ramizy, Z. Hassan, Superlattices and Microstructures 50 (2011) 119-127.

Z. Hens, D. Vanmaekelbergh, E. J. Stoffels, H. Kempen, Phys. Rev. Lett. 88 (2002) 236803.

V. Parkhutik, Solid-state Electron. 43 (1999) 1121-1141. ( Received 08 July 2014; accepted 14 July 2014 ).

Show More Hide