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ILCPA > Volume 19 > The Effect of Silicon Orientation on Thickness and...
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The Effect of Silicon Orientation on Thickness and Chemical Bonding Configuration of SiOxNy Thin Films

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Abstract:

Fourier Transform Infrared (FTIR) Spectroscopy and Capacitance-Voltage measurements are used to characterize the chemical bonding configuration and crystallographic orientations for SiOxNy thin films grown by glass assisted CO2 laser. FTIR spectra detected the Si-O and Si-N strongest absorption bands are close to each other at wave number in the range (700-1000 cm-1) depending on silicon substrates, and Si-O stretching bond at wave number around (~1088.285 cm-1) with a FWHM of 73.863 cm-1 for the two samples, the presences of hydrogen impurities like Si-H and N-H in the films were also identified and calculated. From C-V measurement film thickness were calculated and found to be 19.2 and 17.2 nm for SiOxNy/Si(111) and SiOxNy/Si(100) respectively. From the flat band voltage of -5.4 and -1.3 measured the two samples, their interface trap densities were found to be 1.4 × 1013 and 1.57 × 1013 ev-1·cm-2 respectively.

Info:

Periodical:
International Letters of Chemistry, Physics and Astronomy (Volume 19)
Pages:
1-9
DOI:
10.18052/www.scipress.com/ILCPA.19.1
Citation:
M.M. Ismael "The Effect of Silicon Orientation on Thickness and Chemical Bonding Configuration of SiOxNy Thin Films", International Letters of Chemistry, Physics and Astronomy, Vol. 19, pp. 1-9, 2013
Online since:
Oct 2013
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