Silicon Carbide and Related Materials - 1999
Materials Science Forum Volumes 338 - 342
doi:10.4028/0-87849-854-0
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p335
Surface Composition of 4H-SiC as a Function of Temperature
[
350 K
]
Authors: K.W. Bryant, M.J. Bozack -
p341
Stacking Rearrangement on SiC Surfaces: A Possible Seed for Polytype Heterostructure Growth
[
268 K
]
Authors: Ulrich Starke, J. Bernhardt, J. Schardt, A. Seubert, K. Heinz -
p345
Atomic Structure of 6H-SiC(000-1)-(2x2)c
[
309 K
]
Authors: J. Bernhardt, A. Seubert, M. Nerding, Ulrich Starke, A. Heinz -
p349
Ab Initio Calculation on Clean and Oxygen Covered 6H-SiC(0001) Surfaces: (√ 3x√ 3)R30° Reconstruction
[
270 K
]
Authors: Wenchang Lu, Peter Krüger, Johannes Pollmann -
p353
Photo-Emission Electron Microscopy (PEEM) of Cleaned and Etched 6H-SiC(0001)
[
308 K
]
Authors: J.D. Hartman, K. Naniwae, C. Petrich, V. Ramachandran, R.M. Feenstra, Robert J. Nemanich, Robert F. Davis -
p357
High Resolution Electron Energy Loss Spectroscopy of √ 3x√ 3 6H-SiC(0001)
[
187 K
]
Authors: Kunimasa Takahashi, Masao Uchida, Makoto Kitabatake -
p361
In-Situ RHEED Analysis During α-SiC Homoepitaxy on (0001)Si- and (000-1)C-Faces by Gas Source Molecular Beam Epitaxy
[
194 K
]
Authors: Tomoaki Hatayama, Takashi Fuyuki, Shun-ichi Nakamura, K. Kurobe, Tsunenobu Kimoto, Hiroyuki Matsunami -
p365
(10-10)– and (11-20)–Surfaces in 2H–, 4H– and 6H–SiC
[
163 K
]
Authors: E. Rauls, Z. Hajnal, Peter Deák, Thomas Frauenheim -
p369
Theory of Structural and Electronic Properties of Cubic SiC Surfaces
[
446 K
]
Authors: Johannes Pollmann, Peter Krüger, Wenchang Lu -
p375
Characterization of Anisotropic Step-bunching on as-grown SiC Surfaces
[
392 K
]
Authors: Mikael Syväjärvi, Rositza Yakimova, T. Iakimov, Erik Janzén
