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Silicon Carbide and Related Materials - 1999

Materials Science Forum Volumes 338 - 342

• Papers
• Abstracts

• p293 Studies of the Initial Stages of Silicon Carbide Growth using Molecular Hydrocarbon and Methyl Radical Gas Species   [ 269 K ]
  Authors: J.S. Gold, J.S. Lannon, Jr., V.L. Tolani, K.S. Ziemer, C.D. Stinespring
• p297 Carbonization of SIMOX Substrates for Fabrication of Single-crystal SiC-on-insulator   [ 356 K ]
  Authors: Shinsuke Harada, M. Arita, Yoshifumi Ikoma, Teruaki Motooka
• p301 SOL Thinning Effects on 3C-SiC on SOI*   [ 214 K ]
  Authors: N. Planes, H. Möller, Jean Camassel, Y. Stoimenos, L. Falkovski, M. Eickhoff, G. Krötz
• p305 Low Temperature Growth of 3C-SiC on Silicon for Advanced Substrate Development   [ 274 K ]
  Authors: M.E. Okhuysen, Michael S. Mazzola, Y.-H. Lo
• p309 Epitaxial Growth of β-SiC on Ion-Beam Synthesized β-SiC: Structural Characterization   [ 236 K ]
  Authors: A. Romano-Rodríguez, A. Pérez-Rodríguez, C. Serre, J.R. Morante, Jaume Esteve, M.C. Acero, R. Kögler, Wolfgang Skorupa, Mikael Östling, Nils Nordell, S. Karlsson, J. Van Landuyt
• p313 Growth of Single Crystalline 3C-SiC and AIN on Si using Porous Si as a Compliant Seed Crystal   [ 242 K ]
  Authors: D. Purser, M. Jenkins, D. Lieu, F. Vaccaro, A. Faik, M.A. Hasan, H.J. Leamy, C. Carlin, M.R. Sardela Jr., Qing Xiang Zhao, Magnus Willander, M. Karlsteen
• p317 The Growth and Characterization of 3C-SiC/SiNx/Si Structure   [ 209 K ]
  Authors: Kwang Chul Kim, Chan Il Park, Kee Suk Nahm, Eun Kyung Suh
• p321 The Diffusion Coefficient of Silicon in Thin SiC Layers as a Criterion for the Quality of the Grown Layers   [ 221 K ]
  Authors: Volker Cimalla, T. Wöhner, Jörg Pezoldt
• p325 Plasma Enhanced Chemical Vapor Deposition and Characterization of Hydrogenated Amorphous SiC Films on Si   [ 230 K ]
  Authors: Yi Hua Wang, Jian Yi Lin, Zhe Chuan Feng, Soo Jin Chua, Cheng Hon Huan Alfred
• p329 Thin Films of α-Si_1-xC_x:H Deposited by PECVD: The r.f. Power and H₂ Dilution Role   [ 221 K ]
  Authors: R.J. Prado, M.C.A. Fantini, M.H. Tabacniks, I. Pereyra, A.M. Flank