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Silicon Carbide and Related Materials - 1999

Materials Science Forum Volumes 338 - 342

• Papers
• Abstracts

• p253 The APD Annihilation Mechanism of 3C-SiC Hetero-Epilayer on Si(001) Substrate   [ 286 K ]
  Authors: Yuuki Ishida, Tetsuo Takahashi, Hajime Okumura, Toshihiro Sekigawa, Sadafumi Yoshida
• p257 Improvement of 3C-SiC Surface Morphology on Si(100) by Adding HCl using Atmospheric CVD   [ 227 K ]
  Authors: Yi Chen, Yasuichi Masuda, Chacko Jacob, T. Shirafuji, Shigehiro Nishino
• p261 Carbonization on (100) Silicon for Heteroepitaxial Growth of 3C-SiC   [ 272 K ]
  Authors: Hideki Shimizu, Takaomi Ohba
• p265 Growth of 3C-SiC/Si Multilayer Heterostructures by Supersonic Free Jets   [ 260 K ]
  Authors: Yoshifumi Ikoma, Takeshi Endo, T. Tada, Fumio Watanabe, Teruaki Motooka
• p269 Formation of High Quality SiC on Si(100) at 900°C using Monomethylsilane Gas-Source MBE   [ 570 K ]
  Authors: Hideki Nakazawa, M. Suemitsu, S. Asami
• p273 Growth and Characterization of N-Doped SiC Films from Trimethylsilane   [ 201 K ]
  Authors: Jin Ming Chen, A.J. Steckl, Mark J. Loboda
• p277 The Effect of Ge on the Structure & Morphology of SiC Films Grown on (111) Si Substrates   [ 301 K ]
  Authors: W.L. Sarney, L. Salamanca-Riba, P. Zhou, Crawford Taylor, Michael G. Spencer, R.D. Vispute, Kenneth A. Jones
• p281 In Situ Monitoring of the Effect of Ge on the SiC Growth on (111)Si Surfaces   [ 280 K ]
  Authors: T. Wöhner, Thomas Stauden, J.A. Schaefer, Jörg Pezoldt
• p285 Structural Investigations of the Nucleation and Growth of SiC during Rapid Thermal Conversion of (111)Si   [ 290 K ]
  Authors: Volker Cimalla, W. Attenberger, J.K.N. Lindner, B. Stritzker, Jörg Pezoldt
• p289 The Influence of Foreign Atoms on the early Stages of SiC Growth on (111)Si   [ 239 K ]
  Authors: Jörg Pezoldt, György Vida, M. Rouhani Laridjani, M. Averous, T. Wöhner, J.A. Schaefer, Thomas Stauden, Gernot Ecke, R. Pieterwas, Lothar Spieß