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Silicon Carbide and Related Materials - 1999

Materials Science Forum Volumes 338 - 342

• Papers
• Abstracts

• p213 Mechanisms of SiC(111) Step Flow Growth   [ 413 K ]
  Authors: Phillip J. Stout
• p217 Mechanism of Various Defects Formation in Epitaxial Layer Prepared by Sublimation Epitaxy   [ 237 K ]
  Authors: Tomoaki Furusho, K. Matsumoto, Hiroshi Harima, Shigehiro Nishino
• p221 Investigation of 3C-SiC Epitaxial Layers Grown by Sublimation Epitaxy   [ 163 K ]
  Authors: D.V. Davydov, A.A. Lebedev, A.S. Tregubova, V.V. Kozlovski, A.N. Kuznetsov, E.V. Bogdanova
• p225 Growth of SiC and GaN on Porous Buffer Layers   [ 232 K ]
  Authors: M. Mynbaeva, N.S. Savkina, A.S. Tregubova, M.P. Scheglov, A.A. Lebedev, A.S. Zubrilov, A. Titkov, A. Kryganovski, K. Mynbaev, N.V. Seredova, D. Tsvetkov, S. Stepanov, A.E. Cherenkov, I. Kotousova, Vladimir Dmitriev
• p229 4H-SiC Layers Grown by Liquid Phase Epitaxy on 4H-SiC Off-Axis Substrates   [ 177 K ]
  Authors: N.I. Kuznetsov, A. Morozov, D. Bauman, V. Ivantsov, V. Sukhoveyev, I. Nikitina, A.S. Zubrilov, S.V. Rendakova, Vladimir Dmitriev, D. Hofman, György Vida
• p233 Temperature Gradient Effect on SiC Epitaxy in Liquid Phase   [ 370 K ]
  Authors: Muhammad Nasir Khan, Shin Ichi Nishizawa, Wook Bahng, Kazuo Arai
• p237 Micropipe Healing in Liquid Phase Epitaxial Growth of SiC   [ 419 K ]
  Authors: Rositza Yakimova, Mikael Syväjärvi, S.V. Rendakova, Vladimir Dmitriev, Anne Henry, Erik Janzén
• p241 Growth of CVD Thin Films and Thick LPE 3C SiC in a Specially Designed Reactor   [ 481 K ]
  Authors: André Leycuras
• p245 Lateral Epitaxial Overgrowth and Pendeo Epitaxy of 3C-SiC on Si Substrates   [ 292 K ]
  Authors: S.E. Saddow, G.E. Carter, Bruce Geil, T.S. Zheleva, Galyna Melnychuck, M.E. Okhuysen, Michael S. Mazzola, R.D. Vispute, Michael A. Derenge, Matthew H. Ervin, Kenneth A. Jones
• p249 Selective Epitaxial Growth of Silicon Carbide on Patterned Silicon Substrates Using Hexachlorodisilane and Propane   [ 260 K ]
  Authors: Chacko Jacob, Moon Hi Hong, Juyong Chung, P. Pirouz, Shigehiro Nishino