HOME CONTACT

Username: Password:

> @scientific.net

Silicon Carbide and Related Materials - 1999

Materials Science Forum Volumes 338 - 342

• Papers
• Abstracts

• p173 Multi-Wafer VPE Growth and Characterization of SiC Epitaxial Layers   [ 231 K ]
  Authors: H.D. Nordby, Jr., Michael J. O'Loughlin, Mike F. MacMillan, Al A. Burk, James D. Oliver
• p177 Homoepitaxy of Silicon Carbide Using the Single Precursor 1,3-Disilabutane   [ 240 K ]
  Authors: Sung Yong Lee, Kyung Won Lee, Yunsoo Kim
• p181 Supersonic Seeded Beam Assisted Growth of Epitaxial Silicon Carbide   [ 314 K ]
  Authors: K.D. Jamison, M.L. Kempel, R.L. Woodin, J.D. Shovlin, D. Beck, Q. Li, M.E. Kordesch
• p185 4H-SiC Substrate Orientation Effects on Hydrogen Etching and Epitaxial Growth   [ 253 K ]
  Authors: B.E. Landini, George R. Brandes
• p189 4H-SiC (11-20) Epitaxial Growth   [ 206 K ]
  Authors: Tsunenobu Kimoto, Toshihiro Yamamoto, Zhi Yong Chen, Hiroshi Yano, Hiroyuki Matsunami
• p193 Homoepitaxial Growth of 6H SiC on Single Crystalline Spheres   [ 319 K ]
  Authors: Kai Christiansen, S. Christiansen, Horst P. Strunk, Reinhard Helbig
• p197 Morphological Stability of 6H-SiC Epitaxial Layer on Hemispherical Substrates Prepared by Chemical Vapor Deposition   [ 310 K ]
  Authors: Shigehiro Nishino, Y. Nishio, Yasuichi Masuda, Yi Chen, Chacko Jacob
• p201 Growth of SiC on 6H-SiC {01-14} Substrates by Gas Source Molecular Beam Epitaxy   [ 305 K ]
  Authors: Shun-ichi Nakamura, Tomoaki Hatayama, Tsunenobu Kimoto, Takashi Fuyuki, Hiroyuki Matsunami
• p205 Molecular Beam Epitaxial Growth of Heteropolytypic and Low-Dimensional Structures of SiC   [ 333 K ]
  Authors: Andreas Fissel, Ute Kaiser, B. Schröter, J. Kräußlich, H. Hobert, W. Richter
• p209 Thermodynamical Consideration of the Epitaxial Growth of SiC Polytypes   [ 266 K ]
  Authors: Andreas Fissel