Silicon Carbide and Related Materials - 1999
Materials Science Forum Volumes 338 - 342
doi:10.4028/0-87849-854-0
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p131
Fast SiC Epitaxial Growth in a Chimney CVD Reactor and HTCVD Crystal Growth Developments
[
486 K
]
Authors: Alexsandre Ellison, Jie Zhang, W. Magnusson, Anne Henry, Qamar-ul Wahab, J.Peder Bergman, C. Hemmingsson, N.T. Son, Erik Janzén -
p137
Morphology Control for Growth of Thick Epitaxial 4H SiC Layers
[
377 K
]
Authors: Jie Zhang, Alexsandre Ellison, Erik Janzén -
p141
Vertical Hot-Wall Type CVD for SiC Growth
[
172 K
]
Authors: Kunimasa Takahashi, Masao Uchida, Makoto Kitabatake, Takeshi Uenoyama -
p145
LPCVD Growth and Structural Properties of 4H-SiC Epitaxial Layers
[
365 K
]
Authors: Hidekazu Tsuchida, Isaho Kamata, Tamotsu Jikimoto, Kunikaza Izumi -
p149
3-D Computational Modeling of SiC Epitaxial Growth in a Hot Wall Reactor
[
190 K
]
Authors: Wei Ji, Peter M. Lofgren, Christer Hallin, Chun-Yuan Gu -
p153
3-D Thermal and Flow Modeling of Hot Wall Epitaxial Chemical Vapor Deposition Reactors, Heated by Induction
[
207 K
]
Authors: Peter M. Lofgren, Christer Hallin, Chun-Yuan Gu, Wei Ji -
p157
The Development of Resistive Heating for the High Temperature Growth of α-SiC using a Vertical CVD Reactor
[
186 K
]
Authors: Ebenezer Eshun, Crawford Taylor, N.Fama Diagne, Michael G. Spencer, Alex Gurary, Ian T. Ferguson, Rick Stall -
p161
Initial Results on Thick 4H-SiC Epitaxial Layers Grown Using Vapor Phase Epitaxy
[
323 K
]
Authors: L.B. Rowland, Greg Dunne, Jaime A. Freitas -
p165
High Growth Rate Epitaxy of Thick 4H-SiC Layers
[
287 K
]
Authors: Mikael Syväjärvi, Rositza Yakimova, Henrik Jacobsson, Margareta K. Linnarsson, Anne Henry, Erik Janzén -
p169
Competitive Growth between Deposition and Etching in 4H-SiC CVD Epitaxy Using Quasi-Hot Wall Reactor
[
237 K
]
Authors: Mitsuhiro Kushibe, Yuuki Ishida, Hajime Okumura, Tetsuo Takahashi, Koh Masahara, Takaya Ohno, Takahito Suzuki, Tomoyuki Tanaka, Sadafumi Yoshida, Kazuo Arai
