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Silicon Carbide and Related Materials - 1999

Materials Science Forum Volumes 338 - 342

• Papers
• Abstracts

• p501 High Order X-ray Diffraction and Internal Atomic Layer Roughness of Epitaxial and Bulk SiC Materials   [ 207 K ]
  Authors: G. Xu, Zhe Chuan Feng
• p505 4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density   [ 303 K ]
  Authors: Evgenia Kalinina, A.S. Zubrilov, V. Solov'ev, N.I. Kuznetsov, Anders Hallén, Andrey O. Konstantinov, S. Karlsson, S.V. Rendakova, Vladimir Dmitriev
• p509 Structural and Optical Studies of Low-Doped n-6H SiC Layers Grown by Vacuum Sublimation   [ 490 K ]
  Authors: N.S. Savkina, A.A. Lebedev, A.S. Tregubova, M.P. Scheglov
• p513 Stacking Fault Energy of 6H-SiC and 4H-SiC Single Crystals   [ 406 K ]
  Authors: Moon Hi Hong, A.V. Samant, P. Pirouz
• p517 Deformation Tests on 4H-SiC Single Crystals between 900°C and 1360°C and the Microstructure of the Deformed Samples   [ 282 K ]
  Authors: J.L. Demenet, Moon Hi Hong, P. Pirouz
• p521 Void Shapes in the Si (111) Substrate at the Heteroepitaxial Thin Film / Si Interface   [ 308 K ]
  Authors: J. Jinschek, Ute Kaiser, W. Richter
• p525 Defect Characterization in 3C-SiC Films Grown on Thin and Thick Silicon Top Layers of SIMOX   [ 356 K ]
  Authors: Moon Hi Hong, Juyong Chung, F. Namavar, P. Pirouz
• p529 Structural Characteristics of 3C-SiC Films Epitaxially Grown on the Si/Si₃N₄/SiO₂ System   [ 411 K ]
  Authors: S. Zappe, H. Möller, G. Krötz, M. Eickhoff, Wolfgang Skorupa, E. Obermeier, J. Stoemenos
• p533 Illusion of New Polytypes   [ 262 K ]
  Authors: Ute Kaiser, A. Chuvilin, W. Richter
• p537 Microstructural, Optical and Electronic Investigation of Anodized 4H-SiC   [ 357 K ]
  Authors: S. Zangooie, P.O.Å. Persson, J.N. Hilfiker, L. Hultman, H. Arwin, Qamar-ul Wahab