Silicon Carbide and Related Materials - 1999
Materials Science Forum Volumes 338 - 342
doi:10.4028/0-87849-854-0
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p461
X-ray Topographic Study of SiC Crystal at High Temperature
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207 K
]
Authors: Hirotaka Yamaguchi, Naoki Oyanagi, Tomohisa Kato, Yukio Takano, Shin Ichi Nishizawa, Wook Bahng, Sadafumi Yoshida, Kazuo Arai
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p465
Synchrotron White Beam Topography Studies of 2H SiC Crystals
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278 K
]
Authors: Michael Dudley, W. Huang, William M. Vetter, Philip G. Neudeck, J. Anthony Powell
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p469
Synchrotron White Beam X-ray Topography and Atomic Force Microscopy Studies of a 540R-SiC Lely Platelet
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363 K
]
Authors: William M. Vetter, Michael Dudley, W. Huang, Philip G. Neudeck, J. Anthony Powell
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p473
X-ray Characterization of 3 inch Diameter 4H and 6H-SiC Experimental Wafers
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310 K
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Authors: T.A. Kuhr, William M. Vetter, Michael Dudley, Marek Skowronski
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p477
Origin of Threading Dislocation Arrays in SiC Boules Grown by PVT
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357 K
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Authors: Seo Young Ha, N.T. Nuhfer, M. De Graef, Gregory S. Rohrer, Marek Skowronski
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p481
Structural Characterization of Silicon Carbide Etched by Using a Combination of Ion Implantation and Wet Chemical Etching
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200 K
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Authors: T. Henkel, Gabriel Ferro, Shin Ichi Nishizawa, H. Pressler, Yasuhito Tanaka, Hisao Tanoue, Naoto Kobayashi
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p485
Polytype and Defect Control of Two Inch Diameter Bulk SiC
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281 K
]
Authors: Makato Sasaki, Hiromu Shiomi, Hiroshi Harima, Shigehiro Nishino
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p489
Correlation of EBIC and SWBXT Imaged Defects and Epilayer Growth Pits in 6H-SiC Schottky Diodes
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363 K
]
Authors: C.M. Schnabel, M. Tabib-Azar, Philip G. Neudeck, S.G. Bailey, H.B. Su, Michael Dudley, R.P. Raffaelle
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p493
Investigation of Low Angle Grain Boundaries in Modified-Lely SiC Crystals by High Resolution X-ray Diffractometry
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300 K
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Authors: Masakazu Katsuno, Noboru Ohtani, Takashi Aigo, Hirokatsu Yashiro, M. Kanaya
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p497
Structural, Electrical and Optical Properties of Bulk 4H and 6H p-Type SiC
[
239 K
]
Authors: Evgenia Kalinina, A.S. Zubrilov, N.I. Kuznetsov, I. Nikitina, A.S. Tregubova, M.P. Shcheglov, V.Ya. Bratus