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Silicon Carbide and Related Materials - 1999

Materials Science Forum Volumes 338 - 342

• Papers
• Abstracts

• p47 Seed Surface Preparation for SiC Sublimation Growth   [ 328 K ]
  Authors: Bernard Pelissier, Cécile Moulin, Etienne Pernot, Mikhail Anikin, Philippe Grosse, Christian Faure, Bernard Ferrand, M. Couchaud, Gérard Basset, Roland Madar
• p51 Single Crystal Growth of 6H-SiC on Saw-Damaged Substrate by Sublimation Method   [ 286 K ]
  Authors: Sohei Okada, Taro Nishiguchi, T. Shimizu, Makato Sasaki, S. Oshima, Shigehiro Nishino
• p55 Thermal Decomposition Cavities in Physical Vapor Transport Grown SiC   [ 308 K ]
  Authors: Edward M. Sanchez, V.D. Heydemann, David W. Snyder, Gregory S. Rohrer, Marek Skowronski
• p59 Initial Stage of Crystallization in the Growth of Silicon Carbide on Substrate with Micropipes   [ 326 K ]
  Authors: I.I. Khlebnikov, Dimitri I. Cherednichenko, Yuri I. Khlebnikov, Tangali S. Sudarshan
• p63 Nucleation of Dislocations during Physical Vapor Transport Growth of Silicon Carbide   [ 242 K ]
  Authors: Edward M. Sanchez, V.D. Heydemann, David W. Snyder, Gregory S. Rohrer, Marek Skowronski
• p67 Plastic Deformation and Residual Stresses in SiC Boules Grown by PVT   [ 379 K ]
  Authors: Seo Young Ha, Gregory S. Rohrer, Marek Skowronski, V.D. Heydemann, David W. Snyder
• p71 Digital X-Ray Imaging of SiC PVT Process: Analysis of Crystal Growth and Powder Source Degradation   [ 280 K ]
  Authors: Peter J. Wellmann, Matthias Bickermann, Dieter Hofmann, L. Kadinski, M. Selder, Thomas L. Straubinger, Albrecht Winnacker
• p75 SiC Single Crystal Growth Rate Measurement by In-Situ Observation using the Transmission X-Ray Technique   [ 218 K ]
  Authors: Naoki Oyanagi, Shin Ichi Nishizawa, Tomohisa Kato, Hirotaka Yamaguchi, Kazuo Arai
• p79 Role of Temperature Gradient in Bulk Crystal Growth of SiC   [ 218 K ]
  Authors: Cengiz M. Balkas, Andrei A. Maltsev, Matthew D. Roth, Nikolay K. Yushin
• p83 Pressure Effect in Sublimation Growth of Bulk SiC   [ 309 K ]
  Authors: Yasuo Kitou, Wook Bahng, Shin Ichi Nishizawa, Shigehiro Nishino, Kazuo Arai